Toshiba GT20J341,S4X(S IGBT Transistors DISCRETE IGBT TRANSISTOR TO-220SIS MOQ=50 V=1.5 IC=20A

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 45 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 20 A