Toshiba 2SK880-BL(TE85L,F) JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA

Technology: Si

Unit Weight: 28 mg

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Gate-Source Cutoff Voltage: - 200 mV

Maximum Drain Gate Voltage: - 50 V

Drain-Source Current at Vgs=0: 1.2 mA

Id - Continuous Drain Current: 500 uA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Vgs - Gate-Source Breakdown Voltage: - 50 V

Vds - Drain-Source Breakdown Voltage: 10 V