Toshiba 2SK3074TE12LF RF Power MOSFET N-Ch Radio Freq 1A 3W 30V VDSS

Gain: 14.9 dB

Technology: Si

Unit Weight: 50 mg

Output Power: 630 mW

Configuration: Single

Mounting Style: SMD/SMT

Operating Frequency: 530 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: + 25 V

Id - Continuous Drain Current: 1 A

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V