Toshiba 2SC3303-Y(T6L1,NQ) BJTs - ບາຍເປີ Transistors NPN VCE 0.4V IC 3A Tstg 1.0 VCEO 80V

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 20 W

DC Current Gain hFE Max: 240

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 200 mV