Toshiba 2SC2712-GR,LXHF BJTs - ບາຍໂປລາ ທຣານຊິສຕໍເຣີ AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-346 (S-Mini)

Width: 1.5 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Single

Qualification: AEC-Q200

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 700

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 250 mV