Toshiba 2SA1943-O(Q) BJTs - ບິໂພລາ ທຣານຊິສຕໍ PNP 230V 15A

Width: 5.2 mm

Height: 26 mm

Length: 20.5 mm

Technology: Si

Unit Weight: 6.756 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 150 W

DC Current Gain hFE Max: 160

Gain Bandwidth Product fT: 30 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 230 V

Continuous Collector Current: - 15 A

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 55

Collector- Emitter Voltage VCEO Max: 230 V

Collector-Emitter Saturation Voltage: 1.5 V