Toshiba 2SA1313-Y,LF BJTs - ບາຍເປີ Transistors S-MINI PLN TRANSIST Pd=200mW F=200MHz

Width: 1.5 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 12 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 240

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV