Texas Instruments TPS1101PWR ສະຫນັບ PMOS ເປັນຫນຶ່ງ P-Ch Enh-Mode MOSFET

Width: 4.4 mm

Height: 1.2 mm

Length: 5 mm

Fall Time: 5.5 ns

Rise Time: 5.5 ns

Technology: Si

Unit Weight: 62 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 11.25 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 710 mW

Vgs - Gate-Source Voltage: - 15 V, + 2 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 2.18 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 4.3 S

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 15 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V