Texas Instruments CSD25480F3 MOSFET

Vgs(th): 1.2 V

Vgs (Max): -12V

Gate Charge (Qg): 0.91nC

Power consumption: 500mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 1.7A

Input Capacitance (Ciss): 155pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 132mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|8V