Texas Instruments CSD25310Q2T MOSFETs -20-V ຊ່ອງ P Nex FET ພະລັງງານ MOSFET si A 595-CSD25310Q2

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 5 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 4.7 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2.9 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 34 S

Rds On - Drain-Source Resistance: 19.9 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V