Texas Instruments CSD25213W10 MOSFETs P-CH NexFET Pwr MOSF ET

Width: 1 mm

Height: 0.62 mm

Length: 1 mm

Fall Time: 970 ns

Rise Time: 520 ns

Technology: Si

Unit Weight: 1.100 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 2.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 510 ns

Typical Turn-Off Delay Time: 1 us

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 67 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 850 mV