Texas Instruments CSD23285F5 MOSFETs -12-V P channel Nex FET ພະລັງງານ MOSFET s A 595-CSD23285F5T

Width: 0.77 mm

Height: 0.35 mm

Length: 1.53 mm

Fall Time: 13 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 0.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 4.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.4 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 3.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8.9 S

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 950 mV