Texas Instruments CSD23280F3T MOSFET

Vgs(th): 0.95 V

Vgs (Max): -6V

Gate Charge (Qg): 1.23nC

Power consumption: 500mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 1.8A

Input Capacitance (Ciss): 234pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 116mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V