Texas Instruments CSD19538Q2 MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19538Q2T

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 2 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 20.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 7 ns

Id - Continuous Drain Current: 14.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 19 S

Rds On - Drain-Source Resistance: 59 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V