Texas Instruments CSD19536KCS MOSFETs 100V N-CH NexFET Pwr MOSFET

Width: 4.7 mm

Height: 16.51 mm

Length: 10.67 mm

Fall Time: 5 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 118 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 259 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 307 S

Rds On - Drain-Source Resistance: 2.7 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V