Texas Instruments CSD19531Q5AT NexFET Power MOSFET 100V 5.3mOhm NexFET Power MOSFET A 595-CSD19531Q5A

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 5.2 ns

Rise Time: 5.8 ns

Technology: Si

Unit Weight: 87.800 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 18.4 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 82 S

Rds On - Drain-Source Resistance: 6.4 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V