Texas Instruments CSD19505KTTT MOSFETs 80-V N channel NexF ET power MOSFET si A 595-CSD19505KTT

Width: 10.26

Height: 4.7 mm

Length: 9.25 mm

Fall Time: 3 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 76 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 262 S

Rds On - Drain-Source Resistance: 3.1 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V