Texas Instruments CSD18502KCS MOSFETs 40-V N-Chanel NxFT Pwr

Width: 4.7 mm

Height: 16.51 mm

Length: 10.67 mm

Fall Time: 9.3 ns

Rise Time: 7.3 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 52 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 259 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 212 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 138 S

Rds On - Drain-Source Resistance: 2.9 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V