Texas Instruments CSD18501Q5A MOSFETs 40V N-Channel NexFET Power MOSFET

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 3.4 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 87.800 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: EVMX777BG-01-00-00, EVMX777G-01-20-00

Transistor Type: 1 N-Channel

Qg - Gate Charge: 42 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.7 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 161 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 118 S

Rds On - Drain-Source Resistance: 3.2 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V