Texas Instruments CSD17581Q5AT MOSFETs 30V N-Ch NexFET ພາວເອີ MOSFET A 595-CSD17581Q5A

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 10 ns

Rise Time: 21 ns

Technology: Si

Unit Weight: 84.400 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 54 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 85 S

Rds On - Drain-Source Resistance: 3.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V