Texas Instruments CSD17559Q5T MOSFET

Vgs(th): 1.7 V

Vgs (Max): 20V

Gate Charge (Qg): 51nC

Power consumption: 3.2|96W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 100A

Input Capacitance (Ciss): 9200pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.15mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V