Texas Instruments CSD17318Q2 MOSFETs 30-V N channel NexF ET power MOSFET si A 595-CSD17318Q2T

Fall Time: 4 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 5.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 16 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 42 S

Rds On - Drain-Source Resistance: 16.9 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 600 mV