Texas Instruments CSD17310Q5A MOSFETs 30V N Channel NexFET Power MOSFET

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 5 ns

Rise Time: 11.6 ns

Technology: Si

Unit Weight: 280 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: TPS40007EVM-001, TPS51220EVM

Transistor Type: 1 N-Channel

Qg - Gate Charge: 8.9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 85 S

Rds On - Drain-Source Resistance: 5.1 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 900 mV