Texas Instruments CSD16556Q5B MOSFETs 25V NexFET N Ch Pwr MosFET

Width: 5 mm

Height: 1 mm

Length: 6 mm

Fall Time: 13 ns

Rise Time: 34 ns

Technology: Si

Unit Weight: 134.700 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 1.2 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V