Texas Instruments CSD16325Q5 MOSFETs N-Channel NexFET ພາວເອີ MOSFET

Width: 5 mm

Height: 1 mm

Length: 6 mm

Fall Time: 12 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 118 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3.1 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 10.5 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 159 S

Rds On - Drain-Source Resistance: 2.2 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V