Texas Instruments CSD16301Q2 MOSFETs N-Channel NexFET ພາວເອີ MOSFET

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 1.7 ns

Rise Time: 4.4 ns

Technology: Si

Unit Weight: 8.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 2.7 ns

Typical Turn-Off Delay Time: 4.1 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 24 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 900 mV