Texas Instruments CSD13201W10 MOSFETs N-CH NexFET Pwr MOSF ET

Width: 1 mm

Height: 0.62 mm

Length: 1 mm

Fall Time: 9.7 ns

Rise Time: 5.9 ns

Technology: Si

Unit Weight: 1.100 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 2.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.2 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3.9 ns

Typical Turn-Off Delay Time: 14.4 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 23 S

Rds On - Drain-Source Resistance: 34 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 650 mV