Taiwan Semiconductor TSM650P02CX RFG MOSFETs -20V, -4.1A, ເຄື່ອງກວດພະລັງງານ MOSFET ຊ່ອງ P ເທົ່າເທົ່າ

Fall Time: 11.4 ns

Rise Time: 17.4 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 6.4 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.56 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 40.7 ns

Id - Continuous Drain Current: 4.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV