Taiwan Semiconductor TSM600NA25CIT C0G MOSFETs 250V, 22A, ເທົ່າຫນຶ່ງ, ຊ່ອງ N ຕ່ຳແຮງດັນ

Fall Time: 25 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 1.584 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 71 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 78 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 78 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

Vgs th - Gate-Source Threshold Voltage: 4.2 V