Taiwan Semiconductor TSM4NB60CI C0G MOSFETs 600V, 4A, ເຄື່ອງກຳກັບພະລັງງານ N-Channel ເປັນເອກະລັກ MOSFET

Fall Time: 19 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 1.700 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.2 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V