Taiwan Semiconductor TSM3911DCX6 RFG MOSFETs -20V, -2.2A, ພາກພະລັງງານ MOSFET ຊ່ວງ P ຄູ່

Fall Time: 6.19 ns

Rise Time: 3.73 ns

Technology: Si

Unit Weight: 15 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 15.23 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.15 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 17.28 ns

Typical Turn-Off Delay Time: 36.05 ns

Id - Continuous Drain Current: 2.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 115 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV