Taiwan Semiconductor TSM260P02CX6 RFG MOSFETs -20V, -6.5A, ພາຍໃນພວກ P-Channel Power MOSFET ເທົ່ານັ້ນ

Fall Time: 24.6 ns

Rise Time: 37.5 ns

Technology: Si

Unit Weight: 15 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 19.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.56 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 10.4 ns

Typical Turn-Off Delay Time: 89.1 ns

Id - Continuous Drain Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 21 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 300 mV