Taiwan Semiconductor TSM1NB60CH C5G MOSFETs 600V, 1A, ເຄື່ອງກວດພະລັງງານ MOSFET ຊ່ອງ N ເທົ່າເທົ່າໜຶ່ງ

Fall Time: 14.9 ns

Rise Time: 6.8 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 39 W

Typical Turn-On Delay Time: 7.7 ns

Typical Turn-Off Delay Time: 15.3 ns

Id - Continuous Drain Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.8 S

Rds On - Drain-Source Resistance: 8 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V