Taiwan Semiconductor TSM170N06PQ56 RLG MOSFETs 60V, 44A, ເຄື່ອງກວດພະລັງງານ MOSFET ຊ່ອງ N ເທົ່າເທົ່າໜຶ່ງ

Fall Time: 17 ns

Rise Time: 19 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 73.5 W

Typical Turn-On Delay Time: 1.4 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V