Taiwan Semiconductor TSM150P03PQ33 RGG MOSFETs -30, -36, ຊັ້ນດຽວ P-Channel

Fall Time: 14.4 ns

Rise Time: 21.8 ns

Technology: Si

Unit Weight: 304.151 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 29.3 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 27.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 59.8 ns

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 19 S

Rds On - Drain-Source Resistance: 13 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V