Taiwan Semiconductor TSM024NA04LCR RLG MOSFETs 40V 170A Single N-Ch annel Power MOSFET

Fall Time: 7.8 ns

Rise Time: 3.6 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 67 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.4 ns

Typical Turn-Off Delay Time: 32.6 ns

Id - Continuous Drain Current: 170 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 50 S

Rds On - Drain-Source Resistance: 2.4 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V