Taiwan Semiconductor TSM018NB03CR RLG MOSFETs 30V, 194A, ເຄື່ອງກວດພະລັງງານ MOSFET ເຊັ່ນ N-Channel ເທົ່າເທົ່າ

Fall Time: 45 ns

Rise Time: 50 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 120 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 194 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 70 S

Rds On - Drain-Source Resistance: 1.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V