Taiwan Semiconductor TSG65N190CR RVG GaN FETs 650V, 11A, PDFN56, E-mode GaN Transistor

Fall Time: 10 ns

Rise Time: 5 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 2.2 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 7 V, + 7 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 8 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 190 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V