Taiwan Semiconductor TQM138KCU RFG MOSFETs 60V, 0.31A, ສັນຍານນ້ອຍຊ່ອງ N ເທົ່າເທົ່າໜຶ່ງ

Fall Time: 7.6 ns

Rise Time: 1.8 ns

Technology: Si

Unit Weight: 6.300 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.7 ns

Typical Turn-Off Delay Time: 8.1 ns

Id - Continuous Drain Current: 310 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V