Taiwan Semiconductor TQM025NH04LCR RLG MOSFETs 40V, 100A, ເຄື່ອງກວດພະລັງງານ MOSFET ຊ່ອງ N ເທົ່າໜຶ່ງ

Fall Time: 5.8 ns

Rise Time: 71 ns

Technology: Si

Unit Weight: 93.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: N-Channel

Qg - Gate Charge: 63.3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 118 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 96 S

Rds On - Drain-Source Resistance: 2.5 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V