STMicroelectronics TIP36C BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີ PNP Gen Pur Power

Width: 5.15 mm

Height: 20.15 mm

Length: 15.75 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 125 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 25 A

Maximum DC Collector Current: 25 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.8 V