STMicroelectronics STW58N60DM2AG High Voltage Automotive-grade N-channel 600 V, 0.052 Ohm typ 50 A MDmesh DM2 Power MOSFET

Width: 15.75 mm

Height: 5.15 mm

Length: 20.15 mm

Fall Time: 12 ns

Rise Time: 60 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 90 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V