STMicroelectronics STPSC10H12DY ດາຍໂອດ Schottky Silicon Carbide ສຳລັບລົດຍນຕະຫລາດ 1200 V, 10 A Silicon Carbide Power Schottky Diode

Technology: SiC

Unit Weight: 1.870 g

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

If - Forward Current: 10 A

Ir - Reverse Current: 5 uA

Vf - Forward Voltage: 1.35 V

Vr - Reverse Voltage: 800 V

Ifsm - Forward Surge Current: 420 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vrrm - Repetitive Reverse Voltage: 1.2 kV