STMicroelectronics STPSC10H065DY ດາຍໂອດ Schottky Silicon Carbide ສຳລັບລົດຍົນ 650V, 10 A Silicon Carbide diode

Technology: SiC

Unit Weight: 2.300 g

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

If - Forward Current: 10 A

Ir - Reverse Current: 9 uA

Vf - Forward Voltage: 1.56 V

Ifsm - Forward Surge Current: 90 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vrrm - Repetitive Reverse Voltage: 650 V