STMicroelectronics STPSC10065D ໄດໂອດຊອດສະຄີ ຊິລິກອນ ຄາບາດ 650 V power Schottky silicon carbide diode

Technology: SiC

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 10 A

Ir - Reverse Current: 7 uA

Vf - Forward Voltage: 1.3 V

Vr - Reverse Voltage: 650 V

Ifsm - Forward Surge Current: 48 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vrrm - Repetitive Reverse Voltage: 650 V