STMicroelectronics STL125N10F8AG MOSFETs ລົດຍົນ N-channel 100 V, 4.6 mOhms ສູງສຸດ, 125 A STripFET F8 Power MOSFET

Fall Time: 17 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 41 ns

Id - Continuous Drain Current: 125 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.6 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V