STMicroelectronics STH60N099DM9-2AG MOSFETs ລະດັບລົດຍົນ N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET

Fall Time: 5 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 1.490 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 44 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 179 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 27 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 99 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V