STMicroelectronics STGWF30NC60S IGBT Transistors 30A 600V ຄວາມໄວສູງ IGBT 5kHz 1.9 VCE

Technology: Si

Unit Weight: 7 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 79 W

Continuous Collector Current: 22 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 35 A