STMicroelectronics STGWA15H120DF2 IGBT Transistors Trench gate field-stop IGBT, ຊຸດ H 1200 V, 15 A ຄວາມໄວສູງ

Technology: Si

Unit Weight: 6.100 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 259 W

Continuous Collector Current: 15 A

Gate-Emitter Leakage Current: +/- 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 30 A