STMicroelectronics STGW30NC60VD IGBT Transistors PowerMESH

Width: 5.16 mm

Height: 21.09 mm

Length: 16.03 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Continuous Collector Current: 80 A

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 80 A